BSC0902NSIATMA1 vs BSC084P03NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0902NSIATMA1 disebabkan oleh Infineon dan BSC084P03NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0902NSIATMA1 BSC084P03NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 30V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TA=25C 23 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance RDS(on) Max at VGS=10V 2.8 mOhm —
Gate Charge QG(0V..10V) 24 nC —
Output Charge QOSS 17 nC —
Power Dissipation (TA) 2.5 W —
Power Dissipation (TC) 48 W —
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +150C
Kemasan PG-TDSON-8-6 (TDSON-8) PG-TDSON-8-5 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Built-in Diode Yes (single with built-in diode) —
Aras MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Status RoHS Compliant Compliant
Lead-Free Yes —
Boson Bebas Yes —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (Ta) — 14.9 A
Continuous Drain Current (Tc) — 78.6 A
Rds(on) max @ VGS = -10 V — 6.1 mOhm
Rds(on) max @ VGS = -2.5 V — [DATA_NEEDED: Rds(on) at 2.5V]
Gate Threshold Voltage (VGS(th) typ) — -1.7 V
Total Gate Charge (Qg) — 58 nC @ VGS = -10 V
Input Capacitance (Ciss) — 3.19 nF
Output Capacitance (Coss) — 110 pF
Reverse Transfer Capacitance (Crss) — 1.52 nF
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Technology Family — OptiMOS P3

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