BSC0906NSATMA1 vs BSC050N03LSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0906NSATMA1 disebabkan oleh Infineon dan BSC050N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC0906NSATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 18 A | 18 A |
| Continuous Drain Current (ID) at Tc | 63 A | 80 A |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Kemasan | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS | OptiMOS 3 (N-channel trench MOSFET) |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | — |
| Gambaran Suhu Operasi | -55C to +150C (junction, typical) | -55 C to +150 C |
| Kiraan Pin | 8 | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC050N03LSGATMA1 |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| On-State Resistance (RDS(on)) Max at VGS=10V | — | 5 mOhm |
| Power Dissipation (PD) at Tc | — | 50 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Channel Type | — | N-Channel |
| Aras MSL | — | 1 |