BSC0906NSATMA1 vs BSC050N03LSGATMA1 比較
詳細並排比較 BSC0906NSATMA1 由 Infineon 與 BSC050N03LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC0906NSATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 18 A | 18 A |
| Continuous Drain Current (ID) at Tc | 63 A | 80 A |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| 封裝 | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS | OptiMOS 3 (N-channel trench MOSFET) |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | — |
| 工作溫度範圍 | -55C to +150C (junction, typical) | -55 C to +150 C |
| 腳位數 | 8 | — |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC050N03LSGATMA1 |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| On-State Resistance (RDS(on)) Max at VGS=10V | — | 5 mOhm |
| Power Dissipation (PD) at Tc | — | 50 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Channel Type | — | N-Channel |
| MSL 等級 | — | 1 |