BSC0906NSATMA1 vs BSC120N03LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0906NSATMA1 disebabkan oleh Infineon dan BSC120N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0906NSATMA1 BSC120N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 18 A —
Continuous Drain Current (ID) at Tc 63 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Kemasan PG-TDSON-8-6 (SuperSO8, 5x6 mm) PG-TDSON-8-5 (SuperSO-8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS —
RDS(on) max (typical reference) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg @ VGS=10V] —
Gambaran Suhu Operasi -55C to +150C (junction, typical) -55C to +150C (TJ)
Kiraan Pin 8 —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 12 A
Continuous Drain Current (ID) at Tc=25C — 39 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — +/-20 V
On-State Resistance RDS(on) at VGS=10V — 12 mOhm (typical)
On-State Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 28 W
Aras MSL — 1 (per JEDEC J-STD-020)

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