BSC0906NSATMA1 vs BSC120N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC0906NSATMA1 by Infineon and BSC120N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0906NSATMA1
BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon
BSC0906NSATMA1 β ActiveInfineon
BSC120N03LSGATMA1
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC0906NSATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.36 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta | 18 A | β |
| Continuous Drain Current (ID) at Tc | 63 A | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 30 W | β |
| Package | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS | β |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | β |
| Operating Temperature Range | -55C to +150C (junction, typical) | -55C to +150C (TJ) |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 12 A |
| Continuous Drain Current (ID) at Tc=25C | β | 39 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| On-State Resistance RDS(on) at VGS=10V | β | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 28 W |
| MSL Level | β | 1 (per JEDEC J-STD-020) |