BSC0911NDATMA1 vs BSC011N03LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0911NDATMA1 disebabkan oleh Infineon dan BSC011N03LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC0911NDATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Configuration | Dual N-Channel (2 N-CH) | — |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (ID) | 18 A | — |
| Pulsed Drain Current (IDM) | 30 A | 100 A (TC) |
| Power Dissipation (PD) | 1 W | — |
| Kemasan | PG-TISON-8 (8-PowerTDFN) | PG-TDSON-8-1 (SuperSO8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +150C (junction) | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | OptiMOS trench MOSFET | — |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: total gate charge Qg] |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| Product Series | — | OptiMOS 30V |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 37 A |
| On-State Resistance (RDS(on)) at VGS=10V | — | 1.1 mOhm (typ) |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.2 V (typ 1.6 V) |
| Power Dissipation (PD) at TC=25C | — | 96 W |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Gambaran Suhu Operasi | — | -55C to +150C |