BSC0911NDATMA1 vs BSC011N03LSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC0911NDATMA1 sa pamamagitan ng Infineon at BSC011N03LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC0911NDATMA1 BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 ✓ Nakahanda
Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC0911NDATMA1 BSC011N03LSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V —
Configuration Dual N-Channel (2 N-CH) —
Drain-Source Voltage (VDS) 25 V 30 V
Continuous Drain Current (ID) 18 A —
Pulsed Drain Current (IDM) 30 A 100 A (TC)
Power Dissipation (PD) 1 W —
Packhaging PG-TISON-8 (8-PowerTDFN) PG-TDSON-8-1 (SuperSO8)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +150C (junction) —
Channel Type N-Channel Enhancement Mode —
Technology OptiMOS trench MOSFET —
Gate Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: total gate charge Qg]
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL rating] 1
Product Series — OptiMOS 30V
Polarity — N-Channel
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TA=25C — 37 A
On-State Resistance (RDS(on)) at VGS=10V — 1.1 mOhm (typ)
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.2 V (typ 1.6 V)
Power Dissipation (PD) at TC=25C — 96 W
Power Dissipation (PD) at TA=25C — 2.5 W
Hanay ng Temperature na Operasyon — -55C to +150C

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