BSC0911NDATMA1 vs BSC0993NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0911NDATMA1 disebabkan oleh Infineon dan BSC0993NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0911NDATMA1 BSC0993NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V —
Configuration Dual N-Channel (2 N-CH) Dual N-Channel (Array)
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) 18 A —
Pulsed Drain Current (IDM) 30 A —
Power Dissipation (PD) 1 W —
Kemasan PG-TISON-8 (8-PowerTDFN) PG-TISON-8
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Channel Type N-Channel Enhancement Mode —
Technology OptiMOS trench MOSFET OptiMOS 5 trench MOSFET
Gate Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg value]
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Product Series — OptiMOS 5 30V
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ Ta — 17 A
Channel Mode — Enhancement
Gambaran Suhu Operasi — -55C to +150C (junction)
ESD Protection — Yes (integrated)
Lead-Free — Yes
Rds(on) max @ Vgs=10V — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]

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