BSC0921NDIATMA1 vs BSF134N10NJ3GXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0921NDIATMA1 disebabkan oleh Infineon dan BSF134N10NJ3GXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0921NDIATMA1 BSF134N10NJ3GXUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 25V (N-channel) Trench-gate OptiMOS planar
Configuration Dual N-Channel MOSFET Array Single with built-in diode
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) 17 A (per channel) —
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) —
Total Power Dissipation (PD) 1 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) [DATA_NEEDED: Qg value]
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) —
Kemasan PG-TISON-8 (8-pin, exposed pad) MG-WDSON-2 (CanPAK M)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Status RoHS Compliant Compliant
Aras MSL 1 (per Infineon OptiMOS family) [DATA_NEEDED: MSL rating]
Primary Application Synchronous buck converters, VRMs, POL regulators —
Series — OptiMOS 100 V
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 9 A
Continuous Drain Current (ID) at TC=25°C — 40 A
Power Dissipation (PD) at TA=25°C — 2.2 W
Power Dissipation (PD) at TC=25°C — 43 W
Terminal Position — Bottom
Terminal Finish — Silver Nickel
Gambaran Suhu Operasi — -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max value]
Body Diode Reverse Recovery — [DATA_NEEDED: trr value]

Laporan Datasheet & Sumber

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