BSC093N15NS5ATMA1 vs BSC077N12NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC093N15NS5ATMA1 disebabkan oleh Infineon dan BSC077N12NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC093N15NS5ATMA1 BSC077N12NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 150V —
FET Type N-Channel —
Drain-Source Voltage (VDS) Max 150 V —
Continuous Drain Current (ID) at TC 87 A —
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΩ —
Power Dissipation (PD) at TC 139 W —
Kemasan SuperSO8 5x6 (PG-TDSON-8-7) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gate Drive Voltage (VGS) Recommended 10 V —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] 1
Boson Bebas [DATA_NEEDED: halogen free status] —
Part Family — OptiMOS 3 (120 V)
Jenis Transistor — N-Channel MOSFET (enhancement-mode trench)
Drain-Source Voltage (VDS) — 120 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta — 13.4 A
Continuous Drain Current (ID) at Tc — 98 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) max @ VGS=10V — 7.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.5 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Power Dissipation (PD) at Tc — 139 W
Suhu Hubungan Operasi — -55C to +150C
Kiraan Pin — 8
Automotive Grade — Yes (per Infineon part number suffix / datasheet)

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