BSC098N10NS5ATMA1 vs IPB024N10N5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC098N10NS5ATMA1 disebabkan oleh Infineon dan IPB024N10N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ AktifInfineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC098N10NS5ATMA1 | IPB024N10N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | 2.4 mΩ |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: Qg total gate charge] |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: Tj min/max] | -55C to +175C (junction) |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TO263-7 (D2PAK-7) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 (unlimited floor life at <30C/85% RH) |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Continuous Drain Current (ID, TC=25C) | — | 180 A |
| Power Dissipation (PD, TC=25C) | — | 250 W |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: Qg total gate charge] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Ciss value] |
| Output Capacitance Coss | — | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Packaging | — | Tape & Reel (13-inch reel) |
| Boson Bebas | — | Yes (per Infineon product family policy) |