BSC117N08NS5ATMA1 vs IAUT300N08S5N012ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC117N08NS5ATMA1 disebabkan oleh Infineon dan IAUT300N08S5N012ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC117N08NS5ATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 50 W | — |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Gambaran Suhu Operasi | -55 C to +150 C (typical MOSFET junction) | -55 °C to +175 °C (TJ) |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Aras MSL | 1 | [DATA_NEEDED: MSL level] |
| Product Family | — | OptiMOS™-5 80 V |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |