BSC117N08NS5ATMA1 vs IPD060N03LGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC117N08NS5ATMA1 disebabkan oleh Infineon dan IPD060N03LGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 ✓ Aktif
Infineon
IPD060N03LGATMA1 IPD060N03LGATMA1 - 30V 50A OptiMOS N-Ch MOSFET | Infineon

IPD060N03LGATMA1 - 30V 50A OptiMOS N-Ch MOSFET | Infineon

IPD060N03LGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC117N08NS5ATMA1 IPD060N03LGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC117N08NS5ATMA1 —
Technology OptiMOS 5 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) max 49 A (Tc) —
On-State Resistance (RDS(on)) max 11.7 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 50 W —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Gambaran Suhu Operasi -55 C to +150 C (typical MOSFET junction) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL 1 1 (Unlimited)
Product Family — OptiMOS 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID, TC=25C) — 50 A
Pulsed Drain Current (IDM, TC=25C, tp<=10us) — 200 A
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th), typ) — 1.7 V
On-State Resistance (RDS(on), VGS=10V) — 6.0 mOhm (typ) / 7.5 mOhm (max)
On-State Resistance (RDS(on), VGS=4.5V) — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg, typ) — 21 nC
Output Charge (Qoss, typ) — [DATA_NEEDED: Qoss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Power Dissipation (PD, TC=25C) — 56 W
Suhu Hubungan Operasi — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC, max) — 2.5 C/W
Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) — 62 C/W
Kemasan / Case — PG-TO252-3 (DPAK)
Lead-Free / Halogen-Free — Yes / Yes
Packing — Tape & Reel (T/R), 2500 per reel
AEC-Q101 / Automotive Grade — Not qualified
Technology / Generation — OptiMOS 30V, trench MOSFET

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