BSC118N10NSGATMA1 vs BSC146N10LS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC118N10NSGATMA1 disebabkan oleh Infineon dan BSC146N10LS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC118N10NSGATMA1 BSC146N10LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 2 —
FET Type N-Channel —
Mode Enhancement (Normal Level) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta=25C 11 A —
Continuous Drain Current (ID) at Tc=25C 71 A —
Power Dissipation (PD) at Tc=25C 114 W —
Kemasan PG-TDSON-8-1 (TDSON EP, 5x6 mm) PG-TDSON-8-6 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55 C to +150 C —
Technology Trench MOSFET OptiMOS 5 (logic-level)
Lead Plating Pb-free —
Status RoHS Compliant Compliant
Boson Bebas Yes —
JEDEC Qualification Qualified per target application —
Target Application High-frequency SMPS, synchronous rectification —
Gate Charge x RDS(on) FOM Excellent (per datasheet) —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at Tc=25 C — 44 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 14.6 mOhm
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at 4.5 V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — Logic-level (typ. ~1.7 V)
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 52 W
Gambaran Suhu Operasi — -55 C to +150 C (TJ max)
Aras MSL — 1 (per JEDEC J-STD-020)
Avalanche Energy (EAS) — [DATA_NEEDED: EAS]

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