BSC118N10NSGATMA1 vs BSC146N10LS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC118N10NSGATMA1 sa pamamagitan ng Infineon at BSC146N10LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC118N10NSGATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | — |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| Packhaging | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature ng Junction na Operasyon | -55 C to +150 C | — |
| Technology | Trench MOSFET | OptiMOS 5 (logic-level) |
| Lead Plating | Pb-free | — |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 44 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (typ. ~1.7 V) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C (TJ max) |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS] |