BSC120N03LSGATMA1 vs BSC059N04LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC120N03LSGATMA1 disebabkan oleh Infineon dan BSC059N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC120N03LSGATMA1 BSC059N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at Ta=25C 12 A —
Continuous Drain Current (ID) at Tc=25C 39 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
On-State Resistance RDS(on) at VGS=10V 12 mOhm (typical) —
On-State Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 28 W —
Gambaran Suhu Operasi -55C to +150C (TJ) -55 C to +150 C
Kemasan PG-TDSON-8-5 (SuperSO-8, 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Technology — OptiMOS 3 (N-channel trench MOSFET)
Continuous Drain Current (ID, Tc=25C) — 73 A
Continuous Drain Current (ID, Ta=25C) — 16 A
On-State Resistance RDS(on) max @ VGS=10V — 5.9 mOhm
Power Dissipation (Tc=25C) — 50 W
Power Dissipation (Ta=25C) — 2.5 W
Gate-Source Threshold Voltage VGS(th) — 1.2 V to 2.0 V (typ)
Total Gate Charge Qg — [DATA_NEEDED: Qg total, typical nC]
REACH Status — Compliant
Channel Type — N-Channel

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