BSC12DN20NS3GATMA1 vs IPT017N12NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC12DN20NS3GATMA1 disebabkan oleh Infineon dan IPT017N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC12DN20NS3GATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 200V | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 120 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | — |
| Power Dissipation (PD, Tc) | 50 W | — |
| Kemasan | PG-TDSON-8-5 | PG-HSOF-8 (TOLL) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | OptiMOS power MOSFET | OptiMOS 6 |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single N-channel | — |
| Kiraan Pin | 8 | 8 + tab |
| Part Number | — | IPT017N12NM6ATMA1 |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 331 A |
| On-Resistance RDS(on) max | — | 1.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 395 W |
| Suhu Operasi | — | -55C to +175C |
| Packaging | — | Tape & Reel |