BSC190N15NS3GATMA1 vs BSC520N15NS3G Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC190N15NS3GATMA1 disebabkan oleh Infineon dan BSC520N15NS3G disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC190N15NS3GATMA1 BSC520N15NS3G
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 3 (N-Channel) OptiMOS 3 (trench-gate N-channel)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Tc=25C 125 W —
Gambaran Suhu Operasi -55 C to +150 C —
Kemasan PG-TDSON-8-1 (TDSON-8 EP) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Aras MSL 1 —
Manufacturer — Infineon Technologies
Part Number — BSC520N15NS3 G
Drain-Source Voltage (VDS) max — 150 V
Continuous Drain Current (ID) max at TC=25C — 21 A
On-Resistance RDS(on) max — 52 mΩ at VGS=10 V
Power Dissipation (Ptot) at TC=25C — 57 W
Suhu Hubungan Operasi — -55C to +150C
Kiraan Pin — 8
Lead Plating — Pb-free
RoHS Compliance — Compliant
JEDEC Qualification — Qualified per JEDEC
Channel Type — N-Channel (normal level)
Typical Application — DC-DC conversion, synchronous rectification

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