BSC265N10LSFGATMA1 vs BSC118N10NSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC265N10LSFGATMA1 disebabkan oleh Infineon dan BSC118N10NSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC265N10LSFGATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | 6.5 A | — |
| Power Dissipation (PD, Tc) | 78 W | — |
| Technology | OptiMOS 2 (TrenchFET) | Trench MOSFET |
| Kemasan | PG-TDSON-8-1 (TDSON-8) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Gambaran Suhu Operasi | -55 C to +150 C (junction) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| Series | OptiMOS 2 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 2 |
| Mode | — | Enhancement (Normal Level) |
| Continuous Drain Current (ID) at Ta=25C | — | 11 A |
| Continuous Drain Current (ID) at Tc=25C | — | 71 A |
| Power Dissipation (PD) at Tc=25C | — | 114 W |
| Suhu Hubungan Operasi | — | -55 C to +150 C |
| Lead Plating | — | Pb-free |
| Boson Bebas | — | Yes |
| JEDEC Qualification | — | Qualified per target application |
| Target Application | — | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |