BSL308CH6327XTSA1 vs BSP135H6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSL308CH6327XTSA1 disebabkan oleh Infineon dan BSP135H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSL308CH6327XTSA1 | BSP135H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ low-voltage power MOSFETs | — |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | — |
| Kemasan | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223-3 plus tab) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | — |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | — |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | — |
| Total Gate Charge (Qg) | 5 nC @ 10 V | — |
| Input Capacitance (Ciss) | 18 pF | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | -55C to +150C (junction, typical) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Boson Bebas | Yes (per Infineon product family convention) | — |
| Part Number | — | BSP135H6327XTSA1 |
| FET Type | — | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 120 mA |
| Power Dissipation (PD) | — | 1.8 W |
| On-Resistance RDS(on) max | — | 45 ohm at VGS = 0 V |
| On-Resistance RDS(on) | — | 25 ohm (typical, per digchip) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Operating Mode | — | Normally ON (depletion) |
| Technology | — | SIPMOS (planar DMOS) |