BSP135H6906XTSA1 vs BSP135H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP135H6906XTSA1 disebabkan oleh Infineon dan BSP135H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSP135H6906XTSA1 BSP135H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at TA=25C 120 mA —
RDS(on) Max at VGS=0V 45 Ohm —
Power Dissipation (PD) Max 1.8 W —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(off)) Depletion mode (normally-on) —
Gambaran Suhu Operasi -55C to +150C -55C to +150C (junction, typical)
Kemasan PG-SOT223-4 (SOT-223, 3+tab) PG-SOT223-4 (SOT-223-3 plus tab)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 4 (3 leads + drain tab) —
Technology SIPMOS (planar high-voltage) SIPMOS (planar DMOS)
Aras MSL 1 (unlimited) 1
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (per datasheets.com parametric record) —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — BSP135H6327XTSA1
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) — 120 mA
Power Dissipation (PD) — 1.8 W
On-Resistance RDS(on) max — 45 ohm at VGS = 0 V
On-Resistance RDS(on) — 25 ohm (typical, per digchip)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Operating Mode — Normally ON (depletion)

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