BSP135H6906XTSA1 vs BSP135H6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP135H6906XTSA1 sa pamamagitan ng Infineon at BSP135H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSP135H6906XTSA1 | BSP135H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel Depletion Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at TA=25C | 120 mA | — |
| RDS(on) Max at VGS=0V | 45 Ohm | — |
| Power Dissipation (PD) Max | 1.8 W | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(off)) | Depletion mode (normally-on) | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +150C (junction, typical) |
| Packhaging | PG-SOT223-4 (SOT-223, 3+tab) | PG-SOT223-4 (SOT-223-3 plus tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 4 (3 leads + drain tab) | — |
| Technology | SIPMOS (planar high-voltage) | SIPMOS (planar DMOS) |
| Level ng MSL | 1 (unlimited) | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per datasheets.com parametric record) | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSP135H6327XTSA1 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 120 mA |
| Power Dissipation (PD) | — | 1.8 W |
| On-Resistance RDS(on) max | — | 45 ohm at VGS = 0 V |
| On-Resistance RDS(on) | — | 25 ohm (typical, per digchip) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Operating Mode | — | Normally ON (depletion) |