BSS123NH6327XTSA1 vs BSS123IXTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS123NH6327XTSA1 disebabkan oleh Infineon dan BSS123IXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS123NH6327XTSA1 BSS123IXTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] [DATA_NEEDED: VGS(th) min/typ/max]
Gate-Source Voltage Max (VGS) ±20 V —
Kemasan PG-SOT23 (SOT-23-3) PG-SOT-23-3 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +150 °C (junction) -55C to +150C (per family datasheet)
Qualification AEC-Q101 (automotive) Industrial
RoHS Compliance Yes (Pb-free lead plating) —
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Jenis Transistor — N-Channel MOSFET
Technology — OptiMOS Small-Signal
Continuous Drain Current (ID) at TA=25C — 190 mA
Power Dissipation (PD) at TA=25C — 500 mW
RDS(on) (typical, VGS=10 V) — 2.4 ohm
RDS(on) (max per family datasheet) — 6 ohm
Configuration — Single N-Channel
Lead-Free / RoHS — Yes (per distributor listing)
Gate Drive Logic Level — Logic-level compatible

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga