BSS123NH6327XTSA1 vs BSS126H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS123NH6327XTSA1 disebabkan oleh Infineon dan BSS126H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS123NH6327XTSA1 BSS126H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode N-Channel Depletion Mode
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] —
Gate-Source Voltage Max (VGS) ±20 V —
Kemasan PG-SOT23 (SOT-23-3) SOT-23-3 (PG-SOT23)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +150 °C (junction) -55C to +150C (junction, typical)
Qualification AEC-Q101 (automotive) —
RoHS Compliance Yes (Pb-free lead plating) —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at Ta — 21 mA
Power Dissipation (PD) at Ta — 500 mW
On-Resistance (RDS(on)) Max — 500 ohm (typical for depletion-mode)
Gate-Source Voltage (VGS) Range — [DATA_NEEDED: VGS max/min]
Technology — SIPMOS (DMOS)
Kiraan Pin — 3
Configuration — Single
Channel Mode — Depletion (normally-on at VGS = 0)
Status RoHS — Compliant
Lead-Free — Yes
Boson Bebas — Yes (Infineon 'green' package)

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