BSS123NH6327XTSA1 vs BSS816NWH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS123NH6327XTSA1 disebabkan oleh Infineon dan BSS816NWH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSS123NH6327XTSA1 | BSS816NWH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS123NH6327XTSA1 | — |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 20 V |
| Continuous Drain Current (ID) | 190 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| RDS(on) Max | 6 Ω @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and max VGS(th)] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Gate-Source Voltage Max (VGS) | ±20 V | — |
| Kemasan | PG-SOT23 (SOT-23-3) | SOT-323 (PG-SOT323), 3-pin |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 °C to +150 °C (junction) | -55C to +150C |
| Qualification | AEC-Q101 (automotive) | AEC-Q101 (Automotive) |
| RoHS Compliance | Yes (Pb-free lead plating) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Part Family | — | BSS816NW (OptiMOS 2 Small-Signal) |
| Jenis Transistor | — | MOSFET, N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=4.5V | — | 160 mOhm |
| RDS(on) max @ VGS=2.5V | — | [DATA_NEEDED: RDS(on) at 2.5V] |
| Power Dissipation (PD) at TA=25C | — | 500 mW |
| Technology | — | OptiMOS 2 trench MOSFET |
| ESD Protection | — | Yes (integrated, per Infineon datasheet) |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |