BSS123NH6327XTSA1 vs BSS816NWH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSS123NH6327XTSA1 sa pamamagitan ng Infineon at BSS816NWH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Nakahanda
Infineon
BSS816NWH6327XTSA1 BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon

BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon

BSS816NWH6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSS123NH6327XTSA1 BSS816NWH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 20 V
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] [DATA_NEEDED: VGS(th) typ/min/max]
Gate-Source Voltage Max (VGS) ±20 V —
Packhaging PG-SOT23 (SOT-23-3) SOT-323 (PG-SOT323), 3-pin
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55 °C to +150 °C (junction) -55C to +150C
Qualification AEC-Q101 (automotive) AEC-Q101 (Automotive)
RoHS Compliance Yes (Pb-free lead plating) —
Level ng MSL 1 (per JEDEC J-STD-020) 1
Part Family — BSS816NW (OptiMOS 2 Small-Signal)
Uri ng Transistor — MOSFET, N-Channel
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
RDS(on) max @ VGS=4.5V — 160 mOhm
RDS(on) max @ VGS=2.5V — [DATA_NEEDED: RDS(on) at 2.5V]
Power Dissipation (PD) at TA=25C — 500 mW
Technology — OptiMOS 2 trench MOSFET
ESD Protection — Yes (integrated, per Infineon datasheet)
RoHS / Lead-Free — RoHS compliant, lead-free

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