BSS127H6327XTSA2 vs BSD214SNH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS127H6327XTSA2 disebabkan oleh Infineon dan BSD214SNH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSS127H6327XTSA2 | BSD214SNH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel SIPMOS, enhancement mode | N-Channel |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 21 mA (Ta) | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed ID limit] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level, rated) | — |
| On-State Resistance (RDS(on)) max | 500 ohm at ID = 21 mA | — |
| Total Power Dissipation (Ptot) | 500 mW (Ta) | — |
| Suhu Hubungan Operasi | -55 C to +150 C | — |
| Kemasan | SOT-23-3 (PG-SOT23) | SOT-363 (PG-SOT363-PO), 6-pin |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 | — |
| dv/dt Rated | Yes | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Status RoHS | Compliant (lead-free) | Compliant |
| Boson Bebas | Yes, per IEC 61249-2-21 | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| Technology | — | MOSFET (Metal Oxide), OptiMOS |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) at 25C | — | 1.5 A |
| Power Dissipation (Pd) at Ta | — | 500 mW |
| Gate Drive Voltage (Rds On rated) | — | 2.5 V, 4.5 V |
| Rds On (Max) @ Vgs=4.5V | — | [DATA_NEEDED: Rds On at Vgs=4.5V] |
| Rds On (Max) @ Vgs=2.5V | — | [DATA_NEEDED: Rds On at Vgs=2.5V] |
| Vgs(th) (typical) | — | [DATA_NEEDED: Vgs threshold typical] |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Lead Plating | — | Pb-free |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |