BSS138NH6327XTSA2 vs BSS119NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138NH6327XTSA2 disebabkan oleh Infineon dan BSS119NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS138NH6327XTSA2 BSS119NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
Kemasan PG-SOT-23 (3-pin) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max and operating range] -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet]
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
Boson Bebas Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel Tape & Reel (3,000 pcs/reel)
Jenis Transistor — N-Channel MOSFET
FET Technology — Enhancement-mode, planar N-channel
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TA=25°C — 190 mA
Power Dissipation (PD) at TA=25°C — 500 mW
Drain-Source On-Resistance (RDS(on)) max — 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value]
Gate Threshold Voltage (VGS(th)) — 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max]
Gate Drive Voltage (VGS) — ±20 V max
Qualification — AEC-Q101 (automotive grade)
Status RoHS — Compliant
Lead-Free — Yes
Aras MSL — 1 [DATA_NEEDED: confirm from datasheet]

Laporan Datasheet & Sumber

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