BSS192PH6327FTSA1 vs BSP316PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS192PH6327FTSA1 disebabkan oleh Infineon dan BSP316PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS192PH6327FTSA1 BSP316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) SIPMOS (P-channel MOSFET)
Drain-to-Source Voltage (Vdss) 250 V —
Continuous Drain Current (Id) @ 25C 190 mA (Ta) —
Power Dissipation (Pd) 1 W (Ta) —
Drive Voltage (Max Rds On, Min Rds On) 2.8 V, 10 V —
Rds On (Max) @ Id, Vgs [DATA_NEEDED: Rds On max @ Vgs] —
Vgs(th) (Max) [DATA_NEEDED: gate threshold voltage max] —
Vgs(th) (Typ) [DATA_NEEDED: gate threshold voltage typ] —
Kemasan PG-SOT89 (SOT-89-3, 4-pin 3+Tab) PG-SOT223-4 (TO-261-4)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max / operating temp] -55 C to +150 C (junction)
Automotive Qualification AEC-Q101 (per distributor listing) —
Series SIPMOS Small-Signal-Transistor —
Part Status Active —
Status RoHS [DATA_NEEDED: explicit RoHS status from datasheet] Compliant
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Bilangan Pin — 3 + thermal tab
Channel Mode — Enhancement
Aras MSL — 1
Packaging — Tape & Reel (H6327 suffix)

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