BSS806NEH6327XTSA1 vs BSL316CH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS806NEH6327XTSA1 disebabkan oleh Infineon dan BSL316CH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS806NEH6327XTSA1 BSL316CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS806NEH6327XTSA1 —
Jenis Transistor N-Channel MOSFET —
Mode of Operation Enhancement-mode —
Drain-Source Voltage (VDS) 20 V (maximum) 30 V
Continuous Drain Current (ID) 2.3 A (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
On-Resistance RDS(on) 57 mOhm (maximum) —
Kemasan PG-SOT23 (SOT-23-3) PG-TSOP6-6 (TSOP6, 6-pin)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) 6
Lead Plating Pb-free —
RoHS Compliance Yes (compliant) —
AEC-Q101 Qualification Qualified (automotive grade) —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Part Family — OptiMOS small-signal complementary MOSFET
Configuration — Complementary pair (1 N-channel + 1 P-channel in one package)
Continuous Drain Current (N-channel ID) — 1.4 A
Continuous Drain Current (P-channel ID) — 1.5 A
Total Power Dissipation (Ptot) — 500 mW
Suhu Operasi — -55C to +150C (junction)
Technology — OptiMOS low-voltage MOSFET
Channel Type — N-channel + P-channel (dual)
Status RoHS — Compliant
Aras MSL — [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]

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