BSS806NEH6327XTSA1 vs BSS214NH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS806NEH6327XTSA1 disebabkan oleh Infineon dan BSS214NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSS806NEH6327XTSA1 | BSS214NH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS806NEH6327XTSA1 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Mode of Operation | Enhancement-mode | — |
| Drain-Source Voltage (VDS) | 20 V (maximum) | 20 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | 1.5 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| On-Resistance RDS(on) | 57 mOhm (maximum) | — |
| Kemasan | PG-SOT23 (SOT-23-3) | SOT-23 (PG-SOT23), 3 pins |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Yes (compliant) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | -55C to +150C (junction) |
| FET Type | — | N-Channel |
| Drain-Source On-Resistance (RDS(on) max) | — | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | — | ±12 V (recommended) |
| Technology | — | OptiMOS 2 (planar N-channel) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead Finish | — | Pb-free lead plating (matte tin) |
| Status RoHS | — | Compliant |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| ESD Protection | — | Yes (gate ESD diode) |