BSS806NEH6327XTSA1 vs BSS214NH6327XTSA1 比較
詳細並排比較 BSS806NEH6327XTSA1 由 Infineon 與 BSS214NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS806NEH6327XTSA1 | BSS214NH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS806NEH6327XTSA1 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Mode of Operation | Enhancement-mode | — |
| Drain-Source Voltage (VDS) | 20 V (maximum) | 20 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | 1.5 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| On-Resistance RDS(on) | 57 mOhm (maximum) | — |
| 封裝 | PG-SOT23 (SOT-23-3) | SOT-23 (PG-SOT23), 3 pins |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Yes (compliant) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55C to +150C (junction) |
| FET Type | — | N-Channel |
| Drain-Source On-Resistance (RDS(on) max) | — | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | — | ±12 V (recommended) |
| Technology | — | OptiMOS 2 (planar N-channel) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead Finish | — | Pb-free lead plating (matte tin) |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| ESD Protection | — | Yes (gate ESD diode) |