BSS806NEH6327XTSA1 vs BSS806NH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS806NEH6327XTSA1 disebabkan oleh Infineon dan BSS806NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSS806NEH6327XTSA1 | BSS806NH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS806NEH6327XTSA1 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Mode of Operation | Enhancement-mode | — |
| Drain-Source Voltage (VDS) | 20 V (maximum) | 20 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-Resistance RDS(on) | 57 mOhm (maximum) | — |
| Kemasan | PG-SOT23 (SOT-23-3) | PG-SOT23-3 (SOT-23-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Yes (compliant) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | -55 C to +150 C (junction) |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 2 (trench MOSFET) |
| Continuous Drain Current (ID, Ta) | — | 2.3 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on) max) | — | 57 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.8 V rated (logic level) |
| Gate Drive (recommended VGS) | — | 1.8 V to 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissipation (PD, Ta) | — | 500 mW |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant (Pb-free plating) |
| Automotive Qualification | — | AEC-Q101 qualified |