BSS806NEH6327XTSA1 vs BSS806NH6327XTSA1 对比
详细并排对比 BSS806NEH6327XTSA1 出自 Infineon 和 BSS806NH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS806NEH6327XTSA1 | BSS806NH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.14 | $0.19 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS806NEH6327XTSA1 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Mode of Operation | Enhancement-mode | — |
| Drain-Source Voltage (VDS) | 20 V (maximum) | 20 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-Resistance RDS(on) | 57 mOhm (maximum) | — |
| 封装 | PG-SOT23 (SOT-23-3) | PG-SOT23-3 (SOT-23-3) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Yes (compliant) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -55 C to +150 C (junction) |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 2 (trench MOSFET) |
| Continuous Drain Current (ID, Ta) | — | 2.3 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on) max) | — | 57 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.8 V rated (logic level) |
| Gate Drive (recommended VGS) | — | 1.8 V to 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissipation (PD, Ta) | — | 500 mW |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | — | Compliant (Pb-free plating) |
| Automotive Qualification | — | AEC-Q101 qualified |