BSZ031NE2LS5ATMA1 vs BSC0921NDIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ031NE2LS5ATMA1 disebabkan oleh Infineon dan BSC0921NDIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ031NE2LS5ATMA1 BSC0921NDIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ031NE2LS5ATMA1 —
Technology / Platform OptiMOS 5 25V/30V N-channel trench MOSFET —
Drain-Source Voltage (VDS) max 25 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta=25C 19 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 31 A (per channel, package-limited)
RDS(on) max @ VGS=10 V 3.1 mOhm —
RDS(on) typical @ VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 30 W —
Suhu Hubungan Operasi -55 C to +150 C —
Kemasan PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TISON-8 (8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL] 1 (per Infineon OptiMOS family)
Status RoHS Compliant Compliant
Lead-Free Yes —
Boson Bebas Yes —
Technology — OptiMOS 25V (N-channel)
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) — 17 A (per channel)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
Suhu Operasi — -55C to +150C (junction)
Primary Application — Synchronous buck converters, VRMs, POL regulators

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