BSZ068N06NSATMA1 vs IQDH35N03LM5SCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ068N06NSATMA1 disebabkan oleh Infineon dan IQDH35N03LM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ068N06NSATMA1 IQDH35N03LM5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (trench-gate) OptiMOS 5 (trench, shielded-gate)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 40 A —
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID at Ta] —
On-Resistance RDS(on) max 6.8 mΩ @ VGS=10 V —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 46 W —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg typ] —
Gambaran Suhu Operasi -55 °C to +150 °C -55 C to +175 C
Kemasan PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 1 (unlimited)
RoHS / Halogen-Free RoHS compliant, halogen-free —
Manufacturer — Infineon Technologies
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 30 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta — 66 A
Pulsed Drain Current (IDM) at Tc — 700 A
On-State Resistance (RDS(on)) max — 0.35 mOhm @ VGS=10V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 278 W
Status RoHS — Compliant
Marking — IQDH35N03LM5S

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