BSZ068N06NSATMA1 vs IQDH35N03LM5SCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ068N06NSATMA1 sa pamamagitan ng Infineon at IQDH35N03LM5SCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ068N06NSATMA1 - 60V, 6.8mΩ N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 ✓ NakahandaInfineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ068N06NSATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench-gate) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID at Ta] | — |
| On-Resistance RDS(on) max | 6.8 mΩ @ VGS=10 V | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 46 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | -55 C to +175 C |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 | 1 (unlimited) |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Manufacturer | — | Infineon Technologies |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Tindminan RoHS | — | Compliant |
| Marking | — | IQDH35N03LM5S |