BSZ0901NSIATMA1 vs BSC190N12NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ0901NSIATMA1 disebabkan oleh Infineon dan BSC190N12NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N12NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSZ0901NSIATMA1 | BSC190N12NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | BSC190N12NS3GATMA1 |
| Series | OptiMOS 25V | — |
| Technology | OptiMOS trench N-channel MOSFET | OptiMOS 3 (N-Channel Trench) |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 120 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | 8.6 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Kemasan | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: typical VGS(th)] |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg typ] |
| Gambaran Suhu Operasi | -55 C to +150 C (typical MOSFET range) | -55C to +150C |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| Status RoHS | Compliant | Compliant (JESD-609 Code e3) |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 19 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Power Dissipation (PD) at Tc | — | 69 W |
| Avalanche Rated | — | Yes (UIS-tested) |
| Body Diode | — | Integrated |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Configuration | — | Single with built-in diode |