EP3C120F780C8NAE vs EP3C120F780C7N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3C120F780C8NAE disebabkan oleh Altera dan EP3C120F780C7N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP3C120F780C8NAE | EP3C120F780C7N |
|---|---|---|
| Merek | Altera | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | NRND | Aktif |
| Family | Cyclone III | Cyclone III |
| Logic Elements | 119,088 | — |
| Embedded Memory (bits) | 3,981,312 | — |
| Embedded 18x18 Multipliers | 531 | — |
| PLLs | 4 | 4 |
| Maximum User I/O Pins | 531 | — |
| Speed Grade | 8 (commercial) | C7 |
| Kemasan | 780-ball FBGA (FineLine BGA) | 780-pin FBGA (F780) |
| Package Pitch | 1.0 mm | — |
| Package Size | 29 x 29 mm | — |
| Process Node | 65 nm | — |
| Core Voltage | 1.2 V (typ) | — |
| Suhu Operasi | -40C to +85C (industrial) | 0C to +85C (commercial) |
| Configuration Modes | JTAG, AS, AP, PS | AS, AP, FPP, PS, JTAG |
| Status RoHS | Pb-free (lead-free per 'N' suffix) | — |
| Memory Interfaces | DDR, DDR2, QDR II SRAM | — |
| Series | — | EP3C120 |
| Logic Elements (LE) | — | 119,088 |
| Total Memory Bits | — | 3,981,312 |
| Embedded Memory Blocks (M9K) | — | 432 |
| 18x18 Hardware Multipliers | — | 531 |
| Global Clock Networks | — | 20 |
| Maximum User I/O | — | 429 |
| Core Voltage (VCCINT) | — | 1.2 V |
| Process Technology | — | 65 nm low-k |
| Jenis Pemasangan | — | Surface Mount (BGA) |
| Lead-Free / RoHS | — | Yes (suffix N) |