EP3C80F780C7 vs EP3C40F780C7N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3C80F780C7 disebabkan oleh Intel dan EP3C40F780C7N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP3C80F780C7 | EP3C40F780C7N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | Cyclone III | Cyclone III |
| Logic Elements (LE) | 81,264 | — |
| Embedded Memory Bits | 2,810,880 | — |
| Embedded Memory Blocks | M9K (9 Kbit each) | — |
| Embedded 18x18 Multipliers | 244 | — |
| User I/O Pins | 429 | — |
| Phase-Locked Loops (PLLs) | 4 | — |
| Global Clock Networks | 20 | 20 |
| Process Technology | 65 nm CMOS, low-power | — |
| Core Supply Voltage (VCCINT) | 1.2 V | — |
| Configuration Scheme | SRAM, external flash (EPCS) | — |
| Kemasan | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (FineLine BGA) |
| Suhu Operasi | 0C to +85C (commercial) | 0C to +85C (commercial) |
| Speed Grade | C7 | 7 (C7, commercial) |
| Status RoHS | Compliant | — |
| Logic Elements | — | 39,600 LE |
| Total RAM Bits | — | 1,161,216 bits |
| Embedded Multipliers | — | 126 (18x18) |
| User I/Os | — | 535 |
| Process Node | — | 65 nm TSMC low-power |
| Supply Voltage (Core) | — | 1.2 V |
| Configuration Method | — | JTAG, Active Serial, Passive Serial |
| PLLs | — | 4 |
| Lead-Free / RoHS | — | Yes (N suffix) |
| Moisture Sensitivity Level | — | MSL3 (per J-STD-020) |