EP3C80F780C7 vs EP3C40F780C7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C80F780C7 sa pamamagitan ng Intel at EP3C40F780C7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C80F780C7 | EP3C40F780C7N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone III | Cyclone III |
| Logic Elements (LE) | 81,264 | — |
| Embedded Memory Bits | 2,810,880 | — |
| Embedded Memory Blocks | M9K (9 Kbit each) | — |
| Embedded 18x18 Multipliers | 244 | — |
| User I/O Pins | 429 | — |
| Phase-Locked Loops (PLLs) | 4 | — |
| Global Clock Networks | 20 | 20 |
| Process Technology | 65 nm CMOS, low-power | — |
| Core Supply Voltage (VCCINT) | 1.2 V | — |
| Configuration Scheme | SRAM, external flash (EPCS) | — |
| Packhaging | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (FineLine BGA) |
| Temperature na Operasyon | 0C to +85C (commercial) | 0C to +85C (commercial) |
| Speed Grade | C7 | 7 (C7, commercial) |
| Tindminan RoHS | Compliant | — |
| Logic Elements | — | 39,600 LE |
| Total RAM Bits | — | 1,161,216 bits |
| Embedded Multipliers | — | 126 (18x18) |
| User I/Os | — | 535 |
| Process Node | — | 65 nm TSMC low-power |
| Supply Voltage (Core) | — | 1.2 V |
| Configuration Method | — | JTAG, Active Serial, Passive Serial |
| PLLs | — | 4 |
| Lead-Free / RoHS | — | Yes (N suffix) |
| Moisture Sensitivity Level | — | MSL3 (per J-STD-020) |