H5AN4G8NBJR-VKC vs H5AN4G8NBJR-UHI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-VKC disebabkan oleh SK hynix dan H5AN4G8NBJR-UHI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-VKC | H5AN4G8NBJR-UHI |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| Kadar Data | 2666 Mbps (DDR4-2666) | 2400 MT/s |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Kemasan | FBGA-78 (7.5 x 11 mm) | FBGA-78 (78-ball fine-pitch BGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | [DATA_NEEDED: CAS latency for 2666 grade] | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Refresh | [DATA_NEEDED: refresh rate] | Self-refresh and auto-refresh support |
| Status RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Status Lingkungan Hidup | Active | — |
| Density | — | 4 Gbit |
| Organisasi | — | 512M x 8 |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Grade | — | Industrial (-UHI suffix) |
| Antaramuka | — | JEDEC DDR4 SDRAM |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |