H5AN4G8NBJR-VKC vs H5AN4G8NBJR-VKI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-VKC disebabkan oleh SK hynix dan H5AN4G8NBJR-VKI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-VKC | H5AN4G8NBJR-VKI |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| Kadar Data | 2666 Mbps (DDR4-2666) | 2666 Mbps |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kemasan | FBGA-78 (7.5 x 11 mm) | FBGA-78 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Latensi CAS | [DATA_NEEDED: CAS latency for 2666 grade] | [DATA_NEEDED: CAS Latency] |
| Refresh | [DATA_NEEDED: refresh rate] | [DATA_NEEDED: Refresh specification] |
| Status RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | [DATA_NEEDED: RoHS Status] |
| Packaging | Tray | — |
| Status Lingkungan Hidup | Active | — |
| Density | — | 4 Gb |
| Organisasi | — | 512M x 8 |
| Tegangan Pemberi Arus | — | 1.2 V |
| I/O Voltage | — | 1.2 V (SSTL12) |
| Speed Grade | — | V (2666) |
| Temperature Grade | — | Industrial (I suffix) |
| Architecture | — | CMOS, 8n prefetch, bank groups |
| Termination | — | On-Die Termination (ODT) |
| DBI Support | — | Yes (Data Bus Inversion / DM) |