H5AN4G8NBJR-VKC vs H5AN4G8NBJR-VKI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G8NBJR-VKC sa pamamagitan ng SK hynix at H5AN4G8NBJR-VKI sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G8NBJR-VKC | H5AN4G8NBJR-VKI |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| Rate ng Data | 2666 Mbps (DDR4-2666) | 2666 Mbps |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Packhaging | FBGA-78 (7.5 x 11 mm) | FBGA-78 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for 2666 grade] | [DATA_NEEDED: CAS Latency] |
| Refresh | [DATA_NEEDED: refresh rate] | [DATA_NEEDED: Refresh specification] |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | [DATA_NEEDED: RoHS Status] |
| Packaging | Tray | — |
| Katayuan ng Lifecycle | Active | — |
| Density | — | 4 Gb |
| Organisasyon | — | 512M x 8 |
| Volte ng Pagbibigay | — | 1.2 V |
| I/O Voltage | — | 1.2 V (SSTL12) |
| Speed Grade | — | V (2666) |
| Temperature Grade | — | Industrial (I suffix) |
| Architecture | — | CMOS, 8n prefetch, bank groups |
| Termination | — | On-Die Termination (ODT) |
| DBI Support | — | Yes (Data Bus Inversion / DM) |