H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-VKI Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-VKIR disebabkan oleh SK hynix dan H5AN4G8NBJR-VKI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR ✓ Aktif
SK hynix
H5AN4G8NBJR-VKI H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI ✓ Aktif

Pengandingan Spesifikasi

Parametr H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKI
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 4 Gb
Organisasi 512M x 8 512M x 8
Kadar Data 2666 Mbps per pin 2666 Mbps
Supply Voltage (VDD) 1.2 V —
Kemasan 78-ball FBGA FBGA-78
Jenis Pemasangan Surface Mount Surface Mount
Operating Temperature (Industrial) -40C to +85C (case) —
Extended Temperature Range +85C to +95C (case, per datasheet conditions) —
Technology CMOS DRAM —
Product Family H5AN4G4/6/8NBJR series —
Speed Grade Code -VKI —
Packing Suffix R (Tape & Reel) —
VPP Supply [DATA_NEEDED: VPP supply voltage] —
Latensi CAS [DATA_NEEDED: CAS latency] [DATA_NEEDED: CAS Latency]
Package Dimensions [DATA_NEEDED: package dimensions] —
Refresh [DATA_NEEDED: refresh interval specification] [DATA_NEEDED: Refresh specification]
Tegangan Pemberi Arus — 1.2 V
I/O Voltage — 1.2 V (SSTL12)
Speed Grade — V (2666)
Temperature Grade — Industrial (I suffix)
Architecture — CMOS, 8n prefetch, bank groups
Termination — On-Die Termination (ODT)
DBI Support — Yes (Data Bus Inversion / DM)
Suhu Operasi — [DATA_NEEDED: Operating Temperature]
Status RoHS — [DATA_NEEDED: RoHS Status]

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