H5AN8G4NAFR-RDC vs H5AN8G4NAFR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G4NAFR-RDC disebabkan oleh SK hynix dan H5AN8G4NAFR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G4NAFR-RDC | H5AN8G4NAFR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| Organisasi | 1G x 4 | 2Gb x 4 |
| Supply Voltage (VDD) | 1.2 V | — |
| Kemasan | FBGA-78 | 78-ball FBGA |
| Data Rate Class | [DATA_NEEDED: exact -RDC speed bin MT/s] | — |
| CAS Latency (CL) | [DATA_NEEDED: CL for -RDC bin] | — |
| Antaramuka | Synchronous, differential clock CK_t/CK_c | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant (Lead-Free) | Compliant |
| Boson Bebas | Yes | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Refresh | Self-refresh and auto-refresh per DDR4 SDRAM standard | — |
| Manufacturer | SK hynix | — |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 | — |
| Interface Voltage (VDD/VDDQ) | — | 1.2 V +/- 0.06 V |
| Wordline Pump Voltage (VPP) | — | 2.5 V (+0.25/-0.125 V) |
| Speed Bins (per datasheet) | — | DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) |
| Bank Groups | — | 4 (BG0-BG1) |
| Banks | — | 16 (4 bank groups x 4 banks) |
| Row Address | — | A0-A16 (17 bits) |
| Technology | — | CMOS |
| Lead-Free / Halogen-Free | — | Yes (RoHS Compliant per datasheet) |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | — | [DATA_NEEDED: CL for PBC speed bin] |
| Geardown Mode Note | — | DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled |