H5AN8G4NAFR-RDC vs H5AN8G4NAFR-PBC 比較
詳細並排比較 H5AN8G4NAFR-RDC 由 SK hynix 與 H5AN8G4NAFR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G4NAFR-RDC | H5AN8G4NAFR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| 組織 | 1G x 4 | 2Gb x 4 |
| Supply Voltage (VDD) | 1.2 V | — |
| 封裝 | FBGA-78 | 78-ball FBGA |
| Data Rate Class | [DATA_NEEDED: exact -RDC speed bin MT/s] | — |
| CAS Latency (CL) | [DATA_NEEDED: CL for -RDC bin] | — |
| 介面 | Synchronous, differential clock CK_t/CK_c | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant (Lead-Free) | Compliant |
| 無鹵素 | Yes | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| Refresh | Self-refresh and auto-refresh per DDR4 SDRAM standard | — |
| Manufacturer | SK hynix | — |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 | — |
| Interface Voltage (VDD/VDDQ) | — | 1.2 V +/- 0.06 V |
| Wordline Pump Voltage (VPP) | — | 2.5 V (+0.25/-0.125 V) |
| Speed Bins (per datasheet) | — | DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) |
| Bank Groups | — | 4 (BG0-BG1) |
| Banks | — | 16 (4 bank groups x 4 banks) |
| Row Address | — | A0-A16 (17 bits) |
| Technology | — | CMOS |
| Lead-Free / Halogen-Free | — | Yes (RoHS Compliant per datasheet) |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| CAS 延遲 | — | [DATA_NEEDED: CL for PBC speed bin] |
| Geardown Mode Note | — | DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled |