H5AN8G4NAFR-RDC vs H5AN8G8NAFR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G4NAFR-RDC disebabkan oleh SK hynix dan H5AN8G8NAFR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G4NAFR-RDC | H5AN8G8NAFR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gbit |
| Organisasi | 1G x 4 | 1G x 8 (x8) |
| Supply Voltage (VDD) | 1.2 V | — |
| Kemasan | FBGA-78 | 78-ball FBGA |
| Data Rate Class | [DATA_NEEDED: exact -RDC speed bin MT/s] | — |
| CAS Latency (CL) | [DATA_NEEDED: CL for -RDC bin] | — |
| Antaramuka | Synchronous, differential clock CK_t/CK_c | DDR4 (Double Data Rate 4) |
| Bank Architecture | DDR4 bank-group architecture | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant (Lead-Free) | Compliant |
| Boson Bebas | Yes | Yes |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature range] |
| Refresh | Self-refresh and auto-refresh per DDR4 SDRAM standard | — |
| Manufacturer | SK hynix | — |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 | Rev. 1.2 / Jul. 2017 |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Kadar Data | — | 2666 MT/s (per -R speed grade suffix) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Lead-Free | — | Yes |