H5AN8G4NAFR-RDC vs H5AN8G8NAFR-RDC 比較

詳細並排比較 H5AN8G4NAFR-RDC 由 SK hynix 與 H5AN8G8NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G4NAFR-RDC H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix

H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix

H5AN8G4NAFR-RDC ✓ 啟用中
SK hynix
H5AN8G8NAFR-RDC H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC ✓ 啟用中

規格比較

參數 H5AN8G4NAFR-RDC H5AN8G8NAFR-RDC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 8Gb 8 Gbit
組織 1G x 4 1G x 8 (x8)
Supply Voltage (VDD) 1.2 V —
封裝 FBGA-78 78-ball FBGA
Data Rate Class [DATA_NEEDED: exact -RDC speed bin MT/s] —
CAS Latency (CL) [DATA_NEEDED: CL for -RDC bin] —
介面 Synchronous, differential clock CK_t/CK_c DDR4 (Double Data Rate 4)
Bank Architecture DDR4 bank-group architecture —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant (Lead-Free) Compliant
無鹵素 Yes Yes
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature range]
Refresh Self-refresh and auto-refresh per DDR4 SDRAM standard —
Manufacturer SK hynix —
Datasheet Revision Rev. 1.2 / Jul. 2017 Rev. 1.2 / Jul. 2017
Speed Grade — -RDC (DDR4-2666 class)
資料速率 — 2666 MT/s (per -R speed grade suffix)
Core Supply Voltage (VDD) — 1.2 V
I/O Supply Voltage (VDDQ) — 1.2 V
Wordline Supply (VPP) — 2.5 V
Banks / Bank Groups — 16 banks / 4 bank groups (DDR4 8Gb architecture)
Burst Length — 8 (BL8)
CAS 延遲 — [DATA_NEEDED: CAS Latency]
Lead-Free — Yes

資料表與資源

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