H5AN8G6NAFR-RDC vs H5AN8G4NAFR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR-RDC disebabkan oleh SK hynix dan H5AN8G4NAFR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NAFR-RDC | H5AN8G4NAFR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gb | — |
| Organisasi | 512M x 16 | 1G x 4 |
| Tegangan Pemberi Arus | 1.2 V | — |
| Antaramuka | DDR4 (JEDEC-standard) | Synchronous, differential clock CK_t/CK_c |
| Access Mode | Multi Bank Page Burst | — |
| Package Code | TFBGA | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing) | — |
| Technology | CMOS | — |
| Status RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free) |
| Speed Grade | -RDC (see datasheet for bin timing) | — |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Max Clock Rate | [DATA_NEEDED: max clock rate for -RDC bin] | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Density | — | 8Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Kemasan | — | FBGA-78 |
| Data Rate Class | — | [DATA_NEEDED: exact -RDC speed bin MT/s] |
| CAS Latency (CL) | — | [DATA_NEEDED: CL for -RDC bin] |
| Bank Architecture | — | DDR4 bank-group architecture |
| Boson Bebas | — | Yes |
| Refresh | — | Self-refresh and auto-refresh per DDR4 SDRAM standard |
| Manufacturer | — | SK hynix |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |